Thermally Induced Gate Leakage is a failure mode introduced in high temperature, high electric field environments such as in an automotive engine compartment. It occurs in plastic encapsulated bipolar and MOS technologies, and adversely affects the performance and reliability of an integrated circuit (IC). The failure mode is reversible with a high temperature bake without bias. Silicon Cert Laboratories conducts gate leakage testing to the standardized test (AEC-Q100-006) that has been developed to test the sensitivity of an IC to this trapped-charge phenomenon.