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High temperature storage testing is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, including nonvolatile memory devices. During the test, elevated temperatures are used but without electrical stress being applied. If following JESD22-A103, final electrical test measurements are to be completed, unless otherwise specified, within 96 hours after removal of the devices from the specified test conditions. Silicon Cert Laboratories has the capability to conduct this test to 340°C.


 

 
Test
Specifications / Standards
JESD22-A103, COND; A,B,C,D,E,F,G

AEC-Q100

AEC-Q200

GR-468-CORE, (3.3.2.1)

MIL-STD-202, Method 108

MIL-STD-750, Method 1031

MIL-STD-883, Methods 1008