Temperature Storage Testing

 

Temperature storage testing determines the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, which include nonvolatile memory devices. The temperature storage test is intended to be used to determine failure rates only in storage conditions. The samples for test are typically subjected to a specified temperature for a period of time as required by a particular test standard or by potential end users.  For extended test duration, samples are often removed from the chamber for interim electrical testing and inspection.  Temperature storage testing may be considered destructive, depending upon the temperature, time, and the type of packaging of the sample.

 

 

High Temperature Storage Test

The high temperature storage test is an accelerated elevated temperature test that thermally stresses the samples without electrical bias.  Test standards include, but are not limited to, JESD22-A103AEC-Q100, AEC-Q200, and MIL-STD 202, MIL-STD 750 and MIL-STD 883.  Silicon Cert Laboratories has the capability to conduct this testing from ambient up to +300°C.  Unless otherwise specified, this test is performed in an inert (N2) ambient.

 

Low Temperature Storage Test

The low temperature storage test is a reduced (low) temperature test that thermally stress the samples without electrical bias.  Test standards include, but are not limited to, JESD22-A119 and GR-468-CORE.  Silicon Cert Laboratories has the capability to conduct this testing from ambient down to -70°C.  Unless otherwise specified, this test is performed in an inert (N2) ambient.

Contact Silicon Cert Laboratories to discuss your requirements for Temperature Storage Testing.